CSD30N70 MOSFET Datasheet: N-Ch, 30V, 55A. Full specification with pinout and replacement list

CSD30N70 Specs and Replacement

   Type Designator: CSD30N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

CSD30N70 substitution

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CSD30N70 datasheet

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CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R ... See More ⇒

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CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =80A R ... See More ⇒

8.2. Size:207K inchange semiconductor
csd30n30.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor CSD30N30 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: HMS8N65K , HMS8N70 , HMS8N70D , HMS8N70F , HMS8N70I , HMS8N70K , HMS90N04D , AO3413L , IRFB3607 , FNK6075K , KMK1265F , ZM075N03D , YSP040N010T1A , YSK038N010T1A , YSF040N010T1A , 2SK741 , DTM4415 .