All MOSFET. CSD30N70 Datasheet

 

CSD30N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: CSD30N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 55 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 195 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO252

CSD30N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD30N70 Datasheet (PDF)

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 csd30n70.pdf

CSD30N70 CSD30N70

CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R

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 csd30n55.pdf

CSD30N70 CSD30N70

CSD30N55N-Channel Trench Power MOSFETGeneral DescriptionThe CSD30N55 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 5V. This device is suitable for use as awide variety of applications.Schematic DiagramFeatures VDS = 30V,ID =80AR

 8.2. Size:207K  inchange semiconductor
 csd30n30.pdf

CSD30N70 CSD30N70

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor CSD30N30FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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