FDD6692 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD6692
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 357 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de FDD6692 MOSFET
FDD6692 datasheet
fdd6692 fdu6692.pdf
April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim
fdd6692.pdf
isc N-Channel MOSFET Transistor FDD6692 FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr
fdd6690a.pdf
July 2003 FDD6690A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 V Semiconductor s advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge su
fdd6696.pdf
December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low
Otros transistores... FDD6030BL , FDD603AL , FDD6644 , FDU6644 , FDD6670S , FDD6676 , FDD6676S , FDD6680S , AOD4184A , FDU6692 , FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH .
History: SM6107PSU | SLP80R380SJ | IRLR8721PBF | SST310 | JMSL0612AG
History: SM6107PSU | SLP80R380SJ | IRLR8721PBF | SST310 | JMSL0612AG
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