All MOSFET. FDD6692 Datasheet

 

FDD6692 Datasheet and Replacement


   Type Designator: FDD6692
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

 FDD6692 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDD6692 Datasheet (PDF)

 ..1. Size:83K  fairchild semi
fdd6692 fdu6692.pdf pdf_icon

FDD6692

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

 ..2. Size:287K  inchange semiconductor
fdd6692.pdf pdf_icon

FDD6692

isc N-Channel MOSFET Transistor FDD6692FEATURESDrain Current : I =54A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 8.1. Size:117K  fairchild semi
fdd6690a.pdf pdf_icon

FDD6692

July 2003FDD6690A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate chargesu

 8.2. Size:106K  fairchild semi
fdd6696.pdf pdf_icon

FDD6692

December 2002FDD6696/FDU669630V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

Datasheet: FDD6030BL , FDD603AL , FDD6644 , FDU6644 , FDD6670S , FDD6676 , FDD6676S , FDD6680S , HY1906P , FDU6692 , FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH .

History: SM6008NF | 2SK1813

Keywords - FDD6692 MOSFET datasheet

 FDD6692 cross reference
 FDD6692 equivalent finder
 FDD6692 lookup
 FDD6692 substitution
 FDD6692 replacement

 

 
Back to Top

 


 
.