FDD6692 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD6692
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 57 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 54 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 18 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 357 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: TO252
FDD6692 Datasheet (PDF)
fdd6692 fdu6692.pdf
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April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim
fdd6692.pdf
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isc N-Channel MOSFET Transistor FDD6692FEATURESDrain Current : I =54A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
fdd6690a.pdf
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July 2003FDD6690A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate chargesu
fdd6696.pdf
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December 2002FDD6696/FDU669630V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low
fdd6690a.pdf
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isc N-Channel MOSFET Transistor FDD6690AFEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdd6696.pdf
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isc N-Channel MOSFET Transistor FDD6696FEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![FDD6692](https://alltransistors.com/images/us.png)
![FDD6692](https://alltransistors.com/images/es.png)
![FDD6692](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
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