FDP20N40 Todos los transistores

 

FDP20N40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP20N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 273 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.5 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.216 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de FDP20N40 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDP20N40 datasheet

 ..1. Size:150K  fairchild semi
fdh20n40 fdp20n40.pdf pdf_icon

FDP20N40

October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyb

 8.1. Size:838K  fairchild semi
fdp20n50f fdpf20n50ft.pdf pdf_icon

FDP20N40

October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26 Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Fast reve

 8.2. Size:469K  fairchild semi
fdp20n50 fdpf20n50.pdf pdf_icon

FDP20N40

April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially

 8.3. Size:665K  fairchild semi
fdp20n50 fdpf20n50 fdpf20n50t.pdf pdf_icon

FDP20N40

November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to

Otros transistores... FDU6644 , FDD6670S , FDD6676 , FDD6676S , FDD6680S , FDD6692 , FDU6692 , FDH20N40 , IRFP064N , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH .

 

 

 

 

↑ Back to Top
.