FDP20N40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP20N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 273 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32.5 nS
Cossⓘ - Capacitancia de salida: 245 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.216 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de FDP20N40 MOSFET
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FDP20N40 datasheet
fdh20n40 fdp20n40.pdf
October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyb
fdp20n50f fdpf20n50ft.pdf
October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26 Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Fast reve
fdp20n50 fdpf20n50.pdf
April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially
fdp20n50 fdpf20n50 fdpf20n50t.pdf
November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to
Otros transistores... FDU6644 , FDD6670S , FDD6676 , FDD6676S , FDD6680S , FDD6692 , FDU6692 , FDH20N40 , IRFP064N , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH .
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