Справочник MOSFET. FDP20N40

 

FDP20N40 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP20N40
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 273 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 32.5 ns
   Cossⓘ - Выходная емкость: 245 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.216 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FDP20N40

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDP20N40 Datasheet (PDF)

 ..1. Size:150K  fairchild semi
fdh20n40 fdp20n40.pdfpdf_icon

FDP20N40

October 2002FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON) Flyb

 8.1. Size:838K  fairchild semi
fdp20n50f fdpf20n50ft.pdfpdf_icon

FDP20N40

October 2007UniFETTMFDP20N50F / FDPF20N50FTtmN-Channel MOSFET, FRFET 500V, 20A, 0.26Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10ADescription Low gate charge ( Typ. 50nC)These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF)tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reve

 8.2. Size:469K  fairchild semi
fdp20n50 fdpf20n50.pdfpdf_icon

FDP20N40

April 2007TMUniFETFDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especially

 8.3. Size:665K  fairchild semi
fdp20n50 fdpf20n50 fdpf20n50t.pdfpdf_icon

FDP20N40

November 2013FDP20N50 / FDPF20N50 / FDPF20N50TN-Channel UniFETTM MOSFET500 V, 20 A, 230 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC)This MOSFET is tailored to reduce on-state resistance, and to

Другие MOSFET... FDU6644 , FDD6670S , FDD6676 , FDD6676S , FDD6680S , FDD6692 , FDU6692 , FDH20N40 , 5N50 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH .

History: AP80SL650AI | 2SK3604-01S

 

 
Back to Top

 


 
.