FDP20N40 Specs and Replacement
Type Designator: FDP20N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32.5 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.216 Ohm
Package: TO220
FDP20N40 substitution
- MOSFET ⓘ Cross-Reference Search
FDP20N40 datasheet
fdh20n40 fdp20n40.pdf
October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyb... See More ⇒
fdp20n50f fdpf20n50ft.pdf
October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26 Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Fast reve... See More ⇒
fdp20n50 fdpf20n50.pdf
April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially... See More ⇒
fdp20n50 fdpf20n50 fdpf20n50t.pdf
November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to ... See More ⇒
Detailed specifications: FDU6644, FDD6670S, FDD6676, FDD6676S, FDD6680S, FDD6692, FDU6692, FDH20N40, IRFP064N, FDH34N40, FMV60N280S2HF, IRF3305B, ISW65R041CFD, MDI5N40RH, MDP06N033TH, MDP06N090TH, MDP10N055TH
Keywords - FDP20N40 MOSFET specs
FDP20N40 cross reference
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History: AOD3N80 | HY3408APM
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