2SK2586 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2586

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 260 nS

Cossⓘ - Capacitancia de salida: 1760 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO3P

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2SK2586 datasheet

 ..1. Size:90K  renesas
 2sk2586.pdf pdf_icon

2SK2586

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

 0.1. Size:104K  renesas
 rej03g1020 2sk2586ds.pdf pdf_icon

2SK2586

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:34K  panasonic
 2sk2580.pdf pdf_icon

2SK2586

Power F-MOS FETs 2SK2580 2SK2580(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

 8.2. Size:34K  panasonic
 2sk2581.pdf pdf_icon

2SK2586

Power F-MOS FETs 2SK2581 2SK2581(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

MOSTRAR MÁS

Otros transistores... 2SK2522-01MR, 2SK2523-01, 2SK2524-01MR, 2SK2525-01, 2SK2529, 2SK2541, 2SK2553, 2SK2554, IRLZ44N, 2SK2684, 2SK2701, 2SK2702, 2SK2703, 2SK2704, 2SK2705, 2SK2706, 2SK2707