Справочник MOSFET. 2SK2586

 

2SK2586 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2586
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 260 ns
   Cossⓘ - Выходная емкость: 1760 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK2586

 

 

2SK2586 Datasheet (PDF)

 ..1. Size:90K  renesas
2sk2586.pdf

2SK2586
2SK2586

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange

 0.1. Size:104K  renesas
rej03g1020 2sk2586ds.pdf

2SK2586
2SK2586

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:34K  panasonic
2sk2580.pdf

2SK2586
2SK2586

Power F-MOS FETs 2SK25802SK2580(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08

 8.2. Size:34K  panasonic
2sk2581.pdf

2SK2586
2SK2586

Power F-MOS FETs 2SK25812SK2581(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08

 8.3. Size:30K  panasonic
2sk2588.pdf

2SK2586
2SK2586

Power F-MOS FETs 2SK25882SK2588Silicon N-Channel Power F-MOSUnit : mm FeaturesHigh-speed switching4.6 0.29.9 0.3 2.9 0.2Low ON-resistance3.2 0.1No secondary breakdownLow-voltage drive2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipment1 2 37Swit

 8.4. Size:76K  hitachi
2sk258h.pdf

2SK2586
2SK2586

 8.5. Size:227K  inchange semiconductor
2sk258.pdf

2SK2586
2SK2586

isc N-Channel MOSFET Transistor 2SK258DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT

Другие MOSFET... 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 , 2SK2553 , 2SK2554 , P55NF06 , 2SK2684 , 2SK2701 , 2SK2702 , 2SK2703 , 2SK2704 , 2SK2705 , 2SK2706 , 2SK2707 .

 

 
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