2SK2586
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2586
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 260
nS
Cossⓘ -
Output Capacitance: 1760
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
TO3P
2SK2586
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2586
Datasheet (PDF)
..1. Size:90K renesas
2sk2586.pdf 
2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange
0.1. Size:104K renesas
rej03g1020 2sk2586ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:34K panasonic
2sk2580.pdf
Power F-MOS FETs 2SK25802SK2580(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
8.2. Size:34K panasonic
2sk2581.pdf
Power F-MOS FETs 2SK25812SK2581(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
8.3. Size:30K panasonic
2sk2588.pdf
Power F-MOS FETs 2SK25882SK2588Silicon N-Channel Power F-MOSUnit : mm FeaturesHigh-speed switching4.6 0.29.9 0.3 2.9 0.2Low ON-resistance3.2 0.1No secondary breakdownLow-voltage drive2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipment1 2 37Swit
8.5. Size:227K inchange semiconductor
2sk258.pdf
isc N-Channel MOSFET Transistor 2SK258DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT
Datasheet: 2SK2522-01MR
, 2SK2523-01
, 2SK2524-01MR
, 2SK2525-01
, 2SK2529
, 2SK2541
, 2SK2553
, 2SK2554
, IRF640N
, 2SK2684
, 2SK2701
, 2SK2702
, 2SK2703
, 2SK2704
, 2SK2705
, 2SK2706
, 2SK2707
.
