MDP12N50TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDP12N50TH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 165 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 22.7 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 121 pF
Resistencia entre drenaje y fuente RDS(on): 0.65 Ohm
Paquete / Cubierta: TO220
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MDP12N50TH Datasheet (PDF)
mdp12n50th.pdf
MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65 General Description Features The MDP12N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 11.5A @ V = 10V D GSswitching performance and excellent quality. R 0.65 @ V = 10V DS(ON) GSMDP12N50 is suitable device for SMPS, high Speed Applications switching and ge
mdp12n50th.pdf
isc N-Channel MOSFET Transistor MDP12N50THFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mdf12n50bth mdp12n50bth.pdf
MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65General Description Features The MDP/F12N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc
mdf12n50fth mdp12n50fth.pdf
MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic
mdp12n50bth.pdf
isc N-Channel MOSFET Transistor MDP12N50BTHFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
