Справочник MOSFET. MDP12N50TH

 

MDP12N50TH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDP12N50TH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 165 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22.7 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 121 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO220

 Аналог (замена) для MDP12N50TH

 

 

MDP12N50TH Datasheet (PDF)

 ..1. Size:759K  magnachip
 mdp12n50th.pdf

MDP12N50TH MDP12N50TH

MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65 General Description Features The MDP12N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 11.5A @ V = 10V D GSswitching performance and excellent quality. R 0.65 @ V = 10V DS(ON) GSMDP12N50 is suitable device for SMPS, high Speed Applications switching and ge

 ..2. Size:288K  inchange semiconductor
 mdp12n50th.pdf

MDP12N50TH MDP12N50TH

isc N-Channel MOSFET Transistor MDP12N50THFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 6.1. Size:1149K  magnachip
 mdf12n50bth mdp12n50bth.pdf

MDP12N50TH MDP12N50TH

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65General Description Features The MDP/F12N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

 6.2. Size:1068K  magnachip
 mdf12n50fth mdp12n50fth.pdf

MDP12N50TH MDP12N50TH

MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic

 6.3. Size:288K  inchange semiconductor
 mdp12n50bth.pdf

MDP12N50TH MDP12N50TH

isc N-Channel MOSFET Transistor MDP12N50BTHFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top