MDP12N50TH PDF and Equivalents Search

 

MDP12N50TH Specs and Replacement

Type Designator: MDP12N50TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 121 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220

MDP12N50TH substitution

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MDP12N50TH datasheet

 ..1. Size:759K  magnachip
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MDP12N50TH

MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65 General Description Features The MDP12N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 11.5A @ V = 10V D GS switching performance and excellent quality. R 0.65 @ V = 10V DS(ON) GS MDP12N50 is suitable device for SMPS, high Speed Applications switching and ge... See More ⇒

 ..2. Size:288K  inchange semiconductor
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MDP12N50TH

isc N-Channel MOSFET Transistor MDP12N50TH FEATURES Drain Current I = 11.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 6.1. Size:1149K  magnachip
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MDP12N50TH

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65 General Description Features The MDP/F12N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc... See More ⇒

 6.2. Size:1068K  magnachip
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MDP12N50TH

MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic... See More ⇒

Detailed specifications: FDH34N40, FMV60N280S2HF, IRF3305B, ISW65R041CFD, MDI5N40RH, MDP06N033TH, MDP06N090TH, MDP10N055TH, IRF540, MDP13N50TH, MDP18N50TH, MDP5N50TH, MDP7N50, MDP9N50TH, MMD60R360QRH, MMD60R580PBRH, MMD65R380QRH

Keywords - MDP12N50TH MOSFET specs

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