MDP5N50TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDP5N50TH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 93 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MDP5N50TH MOSFET
MDP5N50TH Datasheet (PDF)
mdp5n50th.pdf

MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4 Features General Description V = 500V DSThe MDP5N50 uses advanced Magnachips I = 5.0A @V = 10V D GSMOSFET Technology, which provides low on-state R 1.4 @V = 10V DS(ON) GSresistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and Applications gener
mdp5n50th.pdf

isc N-Channel MOSFET Transistor MDP5N50THFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
mdf5n50zth mdp5n50zth.pdf

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo
mdf5n50fth mdp5n50fth.pdf

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera
Otros transistores... ISW65R041CFD , MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , IRFZ44 , MDP7N50 , MDP9N50TH , MMD60R360QRH , MMD60R580PBRH , MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH .
History: SQM120P04-04L | APQ50SN06A | NCE40H11 | STS11N3LLH5 | SWT38N65KF | IPI60R190C6 | SFF9130Z
History: SQM120P04-04L | APQ50SN06A | NCE40H11 | STS11N3LLH5 | SWT38N65KF | IPI60R190C6 | SFF9130Z



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