Справочник MOSFET. MDP5N50TH

 

MDP5N50TH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MDP5N50TH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 93 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

MDP5N50TH Datasheet (PDF)

 ..1. Size:1197K  magnachip
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MDP5N50TH

MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4 Features General Description V = 500V DSThe MDP5N50 uses advanced Magnachips I = 5.0A @V = 10V D GSMOSFET Technology, which provides low on-state R 1.4 @V = 10V DS(ON) GSresistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and Applications gener

 ..2. Size:287K  inchange semiconductor
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MDP5N50TH

isc N-Channel MOSFET Transistor MDP5N50THFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 7.1. Size:1034K  magnachip
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MDP5N50TH

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo

 7.2. Size:1047K  magnachip
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MDP5N50TH

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 4920 | MSK9N50F | BRCS3710LRA | 60N06L-TQ2-T | CEU830G | RU3090M | IRFR9120N

 

 
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