MDP5N50TH - Даташиты. Аналоги. Основные параметры
Наименование производителя: MDP5N50TH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 93 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 65 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO220
Аналог (замена) для MDP5N50TH
MDP5N50TH Datasheet (PDF)
mdp5n50th.pdf

MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4 Features General Description V = 500V DSThe MDP5N50 uses advanced Magnachips I = 5.0A @V = 10V D GSMOSFET Technology, which provides low on-state R 1.4 @V = 10V DS(ON) GSresistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and Applications gener
mdp5n50th.pdf

isc N-Channel MOSFET Transistor MDP5N50THFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
mdf5n50zth mdp5n50zth.pdf

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo
mdf5n50fth mdp5n50fth.pdf

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera
Другие MOSFET... ISW65R041CFD , MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , IRFZ44 , MDP7N50 , MDP9N50TH , MMD60R360QRH , MMD60R580PBRH , MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH .
History: KF5N50FZ | IRFP460N | SM3405NSQG | MDD5N50RH | IRFP452R | H3055MJ | IXTY5N50P
History: KF5N50FZ | IRFP460N | SM3405NSQG | MDD5N50RH | IRFP452R | H3055MJ | IXTY5N50P



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