MDP5N50TH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP5N50TH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 93
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.2
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package:
TO220
MDP5N50TH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP5N50TH
Datasheet (PDF)
..1. Size:1197K magnachip
mdp5n50th.pdf 
MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4 Features General Description V = 500V DSThe MDP5N50 uses advanced Magnachips I = 5.0A @V = 10V D GSMOSFET Technology, which provides low on-state R 1.4 @V = 10V DS(ON) GSresistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and Applications gener
..2. Size:287K inchange semiconductor
mdp5n50th.pdf
isc N-Channel MOSFET Transistor MDP5N50THFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
7.1. Size:1034K magnachip
mdf5n50zth mdp5n50zth.pdf
MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo
7.2. Size:1047K magnachip
mdf5n50fth mdp5n50fth.pdf
MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera
7.3. Size:1146K magnachip
mdf5n50bth mdp5n50bth.pdf
MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4General Description Features The MDP/F5N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose
7.4. Size:287K inchange semiconductor
mdp5n50bth.pdf
isc N-Channel MOSFET Transistor MDP5N50BTHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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