MDP7N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDP7N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 17.5 nC
   trⓘ - Tiempo de subida: 29.8 nS
   Cossⓘ - Capacitancia de salida: 95.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO220

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MDP7N50 Datasheet (PDF)

..1. Size:1196K magnachip
mdp7n50.pdf

MDP7N50 N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP7N50 uses advanced Magnachips V = 500V DS MOSFET Technology, which provides low on- I = 7.0A @V = 10V D GS state resistance, high switching performance R

0.1. Size:1175K magnachip
mdf7n50bth mdp7n50bth.pdf

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9General Description Features The MDP/F7N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an

0.2. Size:288K inchange semiconductor
mdp7n50th.pdf

isc N-Channel MOSFET Transistor MDP7N50THFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.3. Size:288K inchange semiconductor
mdp7n50bth.pdf

isc N-Channel MOSFET Transistor MDP7N50BTHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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