MDP7N50 PDF and Equivalents Search

 

MDP7N50 Specs and Replacement


   Type Designator: MDP7N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 29.8 nS
   Cossⓘ - Output Capacitance: 95.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220
 

 MDP7N50 substitution

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MDP7N50 datasheet

 ..1. Size:1196K  magnachip
mdp7n50.pdf pdf_icon

MDP7N50

MDP7N50 N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP7N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on- I = 7.0A @V = 10V D GS state resistance, high switching performance R ... See More ⇒

 0.1. Size:1175K  magnachip
mdf7n50bth mdp7n50bth.pdf pdf_icon

MDP7N50

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP/F7N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an... See More ⇒

 0.2. Size:288K  inchange semiconductor
mdp7n50th.pdf pdf_icon

MDP7N50

isc N-Channel MOSFET Transistor MDP7N50TH FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 0.3. Size:288K  inchange semiconductor
mdp7n50bth.pdf pdf_icon

MDP7N50

isc N-Channel MOSFET Transistor MDP7N50BTH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

Detailed specifications: MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , MDP5N50TH , IRF640 , MDP9N50TH , MMD60R360QRH , MMD60R580PBRH , MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH , MMD80R900QZRH .

Keywords - MDP7N50 MOSFET specs

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