MDP9N50TH Todos los transistores

 ..1. Size:770K  magnachip
 mdp9n50th.pdf

MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R

 ..2. Size:288K  inchange semiconductor
 mdp9n50th.pdf

isc N-Channel MOSFET Transistor MDP9N50TH FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 7.1. Size:1150K  magnachip
 mdf9n50bth mdp9n50bth.pdf

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 7.2. Size:288K  inchange semiconductor
 mdp9n50bth.pdf

isc N-Channel MOSFET Transistor MDP9N50BTH FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 9.1. Size:729K  magnachip
 mdp9n60th.pdf

MDP9N60 N-Channel MOSFET 600V, 9A, 0.75 General Description Features The MDP9N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V DS switching performance and excellent quality. I =9.0A @ V = 10V D GS RDS(ON) 0.75 @ VGS = 10V MDP9N60 is suitable device for SMPS, high Speed switching Applications an

 9.2. Size:646K  cn minos
 mp9n20 mpf9n20 mdp9n20 mdt9n20.pdf

Description MDT9N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 9 A D R 0.27 DS(ON).Typ

 9.3. Size:289K  inchange semiconductor
 mdp9n60th.pdf

isc N-Channel MOSFET Transistor MDP9N60TH FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno