Справочник MOSFET. MDP9N50TH

 

MDP9N50TH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDP9N50TH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO220

 Аналог (замена) для MDP9N50TH

 

 

MDP9N50TH Datasheet (PDF)

 ..1. Size:770K  magnachip
 mdp9n50th.pdf

MDP9N50TH MDP9N50TH

MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R

 ..2. Size:288K  inchange semiconductor
 mdp9n50th.pdf

MDP9N50TH MDP9N50TH

isc N-Channel MOSFET Transistor MDP9N50THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.1. Size:1150K  magnachip
 mdf9n50bth mdp9n50bth.pdf

MDP9N50TH MDP9N50TH

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 7.2. Size:288K  inchange semiconductor
 mdp9n50bth.pdf

MDP9N50TH MDP9N50TH

isc N-Channel MOSFET Transistor MDP9N50BTHFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 9.1. Size:729K  magnachip
 mdp9n60th.pdf

MDP9N50TH MDP9N50TH

MDP9N60 N-Channel MOSFET 600V, 9A, 0.75 General Description Features The MDP9N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I =9.0A @ V = 10V D GS RDS(ON) 0.75 @ VGS = 10V MDP9N60 is suitable device for SMPS, high Speed switching Applications an

 9.2. Size:289K  inchange semiconductor
 mdp9n60th.pdf

MDP9N50TH MDP9N50TH

isc N-Channel MOSFET Transistor MDP9N60THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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