MDP9N50TH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP9N50TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220
MDP9N50TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP9N50TH Datasheet (PDF)
mdp9n50th.pdf
MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R
mdp9n50th.pdf
isc N-Channel MOSFET Transistor MDP9N50THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
mdf9n50bth mdp9n50bth.pdf
MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo
mdp9n50bth.pdf
isc N-Channel MOSFET Transistor MDP9N50BTHFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
mdp9n60th.pdf
MDP9N60 N-Channel MOSFET 600V, 9A, 0.75 General Description Features The MDP9N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I =9.0A @ V = 10V D GS RDS(ON) 0.75 @ VGS = 10V MDP9N60 is suitable device for SMPS, high Speed switching Applications an
mdp9n60th.pdf
isc N-Channel MOSFET Transistor MDP9N60THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: LSD70R450GT
