MME60R290QRH Todos los transistores

 

MME60R290QRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MME60R290QRH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 927 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de MME60R290QRH MOSFET

- Selecciónⓘ de transistores por parámetros

 

MME60R290QRH datasheet

 ..1. Size:1458K  magnachip
mme60r290qrh.pdf pdf_icon

MME60R290QRH

MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:290K  inchange semiconductor
mme60r290qrh.pdf pdf_icon

MME60R290QRH

isc N-Channel MOSFET Transistor MME60R290QRH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 5.1. Size:1534K  magnachip
mme60r290prh.pdf pdf_icon

MME60R290QRH

MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:289K  inchange semiconductor
mme60r290prh.pdf pdf_icon

MME60R290QRH

isc N-Channel MOSFET Transistor MME60R290PRH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

Otros transistores... MDP9N50TH , MMD60R360QRH , MMD60R580PBRH , MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH , MMD80R900QZRH , 10N60 , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , MMF65R600QTH , MMF80R450PBTH , MMF80R450QZTH .

History: FDD6644 | 2SK2417

 

 

 


History: FDD6644 | 2SK2417

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA

 

 

 

Popular searches

bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640 | 2sb527

 

 

↑ Back to Top
.