MME60R290QRH PDF and Equivalents Search

 

MME60R290QRH Specs and Replacement

Type Designator: MME60R290QRH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 927 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO263

MME60R290QRH substitution

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MME60R290QRH datasheet

 ..1. Size:1458K  magnachip
 mme60r290qrh.pdf pdf_icon

MME60R290QRH

MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 ..2. Size:290K  inchange semiconductor
 mme60r290qrh.pdf pdf_icon

MME60R290QRH

isc N-Channel MOSFET Transistor MME60R290QRH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and ... See More ⇒

 5.1. Size:1534K  magnachip
 mme60r290prh.pdf pdf_icon

MME60R290QRH

MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 5.2. Size:289K  inchange semiconductor
 mme60r290prh.pdf pdf_icon

MME60R290QRH

isc N-Channel MOSFET Transistor MME60R290PRH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

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Detailed specifications: MDP9N50TH, MMD60R360QRH, MMD60R580PBRH, MMD65R380QRH, MMD80R1K2PRH, MMD80R1K2QZRH, MMD80R900PCRH, MMD80R900QZRH, 10N60, MME65R280QRH, MME80R290PRH, MMF60R190QTH, MMF60R280QBTH, MMF60R580QTH, MMF65R600QTH, MMF80R450PBTH, MMF80R450QZTH

Keywords - MME60R290QRH MOSFET specs

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