Справочник MOSFET. MME60R290QRH

 

MME60R290QRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MME60R290QRH
   Маркировка: 60R290Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 43 ns
   Cossⓘ - Выходная емкость: 927 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
   Тип корпуса: TO263

 Аналог (замена) для MME60R290QRH

 

 

MME60R290QRH Datasheet (PDF)

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 mme60r290qrh.pdf

MME60R290QRH MME60R290QRH

MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:290K  inchange semiconductor
 mme60r290qrh.pdf

MME60R290QRH MME60R290QRH

isc N-Channel MOSFET Transistor MME60R290QRHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 5.1. Size:1534K  magnachip
 mme60r290prh.pdf

MME60R290QRH MME60R290QRH

MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:289K  inchange semiconductor
 mme60r290prh.pdf

MME60R290QRH MME60R290QRH

isc N-Channel MOSFET Transistor MME60R290PRHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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History: MTP2N85 | SVF7N60CK | SVG094R1NS

 

 
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