MME60R290QRH. Аналоги и основные параметры
Наименование производителя: MME60R290QRH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 43 ns
Cossⓘ - Выходная емкость: 927 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: TO263
Аналог (замена) для MME60R290QRH
- подборⓘ MOSFET транзистора по параметрам
MME60R290QRH даташит
mme60r290qrh.pdf
MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mme60r290qrh.pdf
isc N-Channel MOSFET Transistor MME60R290QRH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
mme60r290prh.pdf
MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mme60r290prh.pdf
isc N-Channel MOSFET Transistor MME60R290PRH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
Другие MOSFET... MDP9N50TH , MMD60R360QRH , MMD60R580PBRH , MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH , MMD80R900QZRH , 10N60 , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , MMF65R600QTH , MMF80R450PBTH , MMF80R450QZTH .
History: AP20N15AGI-HF | 2SK2371 | AP2604GY | AP3P090N
History: AP20N15AGI-HF | 2SK2371 | AP2604GY | AP3P090N
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