MMF65R600QTH Todos los transistores

 

MMF65R600QTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMF65R600QTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de MMF65R600QTH MOSFET

- Selecciónⓘ de transistores por parámetros

 

MMF65R600QTH datasheet

 ..1. Size:1611K  magnachip
mmf65r600qth.pdf pdf_icon

MMF65R600QTH

MMF65R600Q Datasheet MMF65R600Q 650V 0.60 N-channel MOSFET Description MMF65R600Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 ..2. Size:279K  inchange semiconductor
mmf65r600qth.pdf pdf_icon

MMF65R600QTH

isc N-Channel MOSFET Transistor MMF65R600QTH FEATURES Drain Current I = 7.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.1. Size:1206K  magnachip
mmf65r190pth.pdf pdf_icon

MMF65R600QTH

MMF65R190P Datasheet MMF65R190P 650V 0.19 N-channel MOSFET Description MMF65R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.2. Size:279K  inchange semiconductor
mmf65r190pth.pdf pdf_icon

MMF65R600QTH

isc N-Channel MOSFET Transistor MMF65R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

Otros transistores... MMD80R900PCRH , MMD80R900QZRH , MME60R290QRH , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , 7N65 , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA

 

 

 

Popular searches

2sa640 | 2sb527 | 30g124 | 75339p mosfet | a968 transistor | f1010e mosfet | 2sc3883 | c3306 datasheet

 

 

↑ Back to Top
.