MMF65R600QTH. Аналоги и основные параметры
Наименование производителя: MMF65R600QTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 640 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F
Аналог (замена) для MMF65R600QTH
- подборⓘ MOSFET транзистора по параметрам
MMF65R600QTH даташит
mmf65r600qth.pdf
MMF65R600Q Datasheet MMF65R600Q 650V 0.60 N-channel MOSFET Description MMF65R600Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf65r600qth.pdf
isc N-Channel MOSFET Transistor MMF65R600QTH FEATURES Drain Current I = 7.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
mmf65r190pth.pdf
MMF65R190P Datasheet MMF65R190P 650V 0.19 N-channel MOSFET Description MMF65R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf65r190pth.pdf
isc N-Channel MOSFET Transistor MMF65R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
Другие MOSFET... MMD80R900PCRH , MMD80R900QZRH , MME60R290QRH , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , 7N65 , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 .
History: STB8NM60
History: STB8NM60
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