MMF65R600QTH - описание и поиск аналогов

 

MMF65R600QTH. Аналоги и основные параметры

Наименование производителя: MMF65R600QTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 33 ns

Cossⓘ - Выходная емкость: 640 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220F

Аналог (замена) для MMF65R600QTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF65R600QTH даташит

 ..1. Size:1611K  magnachip
mmf65r600qth.pdfpdf_icon

MMF65R600QTH

MMF65R600Q Datasheet MMF65R600Q 650V 0.60 N-channel MOSFET Description MMF65R600Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 ..2. Size:279K  inchange semiconductor
mmf65r600qth.pdfpdf_icon

MMF65R600QTH

isc N-Channel MOSFET Transistor MMF65R600QTH FEATURES Drain Current I = 7.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.1. Size:1206K  magnachip
mmf65r190pth.pdfpdf_icon

MMF65R600QTH

MMF65R190P Datasheet MMF65R190P 650V 0.19 N-channel MOSFET Description MMF65R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.2. Size:279K  inchange semiconductor
mmf65r190pth.pdfpdf_icon

MMF65R600QTH

isc N-Channel MOSFET Transistor MMF65R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

Другие MOSFET... MMD80R900PCRH , MMD80R900QZRH , MME60R290QRH , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , 7N65 , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 .

History: STB8NM60

 

 

 

 

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