MMF65R600QTH PDF and Equivalents Search

 

MMF65R600QTH Specs and Replacement

Type Designator: MMF65R600QTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220F

MMF65R600QTH substitution

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MMF65R600QTH datasheet

 ..1. Size:1611K  magnachip
mmf65r600qth.pdf pdf_icon

MMF65R600QTH

MMF65R600Q Datasheet MMF65R600Q 650V 0.60 N-channel MOSFET Description MMF65R600Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as ... See More ⇒

 ..2. Size:279K  inchange semiconductor
mmf65r600qth.pdf pdf_icon

MMF65R600QTH

isc N-Channel MOSFET Transistor MMF65R600QTH FEATURES Drain Current I = 7.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 8.1. Size:1206K  magnachip
mmf65r190pth.pdf pdf_icon

MMF65R600QTH

MMF65R190P Datasheet MMF65R190P 650V 0.19 N-channel MOSFET Description MMF65R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 8.2. Size:279K  inchange semiconductor
mmf65r190pth.pdf pdf_icon

MMF65R600QTH

isc N-Channel MOSFET Transistor MMF65R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

Detailed specifications: MMD80R900PCRH, MMD80R900QZRH, MME60R290QRH, MME65R280QRH, MME80R290PRH, MMF60R190QTH, MMF60R280QBTH, MMF60R580QTH, 7N65, MMF80R450PBTH, MMF80R450QZTH, MMF80R900PCTH, MMF80R900QZTH, MMF80R900PBTH, MMFT60R195PCTH, S40N14S, HY3408

Keywords - MMF65R600QTH MOSFET specs

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