FDMC8884 Todos los transistores

 

FDMC8884 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC8884

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 18 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: POWER33

 Búsqueda de reemplazo de FDMC8884 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDMC8884 datasheet

 ..1. Size:347K  fairchild semi
 fdmc8884.pdf pdf_icon

FDMC8884

October 2010 FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m Features General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 A been especially tailored to minimize the on-state resistance. This High per

 7.1. Size:339K  fairchild semi
 fdmc8882.pdf pdf_icon

FDMC8884

September 2010 FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 A been especially tailored to minimize the on-state resistance. This Hi

 8.1. Size:244K  fairchild semi
 fdmc8878.pdf pdf_icon

FDMC8884

December 2010 FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7A process. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.

 8.2. Size:354K  fairchild semi
 fdmc8854.pdf pdf_icon

FDMC8884

June 2014 FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7m Features General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13A process. It has been optimized for power management Low Profile - 1mm max in Power 33 applica

MOSTRAR MÁS

Otros transistores... FDMC86324 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 , STP4410 , FDMC8882 , STP423S , STP75NF75 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , FDME410NZT , FDME510PZT , FDML7610S .

History: DMC2020USD | BRF60R580C | IXFA80N25X3

 

 

 

 

↑ Back to Top
.