FDMC8884 - аналоги, параметры транзистора - Справочник транзисторов

FDMC8884 даташит

..1. Size:347K fairchild semi
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October 2010 FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m Features General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 A been especially tailored to minimize the on-state resistance. This High per

7.1. Size:339K fairchild semi
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September 2010 FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 A been especially tailored to minimize the on-state resistance. This Hi

8.1. Size:244K fairchild semi
fdmc8878.pdf pdf_icon

December 2010 FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7A process. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.

8.2. Size:354K fairchild semi
fdmc8854.pdf pdf_icon

June 2014 FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7m Features General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13A process. It has been optimized for power management Low Profile - 1mm max in Power 33 applica