FDMC8884 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMC8884
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: POWER33
FDMC8884 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMC8884 Datasheet (PDF)
fdmc8884.pdf
October 2010FDMC8884N-Channel Power Trench MOSFET 30 V, 15 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance. This High per
fdmc8882.pdf
September 2010FDMC8882N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 Abeen especially tailored to minimize the on-state resistance. This Hi
fdmc8878.pdf
December 2010FDMC8878N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7Aprocess. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.
fdmc8854.pdf
June 2014FDMC8854N-Channel Power Trench MOSFET 30V, 15A, 5.7mFeatures General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13Aprocess. It has been optimized for power management Low Profile - 1mm max in Power 33applica
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFT12N100Q | 2SK2419
History: IXFT12N100Q | 2SK2419
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