JFPC8N80C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JFPC8N80C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 167 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de JFPC8N80C MOSFET

- Selecciónⓘ de transistores por parámetros

 

JFPC8N80C datasheet

 ..1. Size:547K  jiaensemi
 jfpc8n80c jffm8n80c.pdf pdf_icon

JFPC8N80C

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 8.1. Size:1072K  jiaensemi
 jfpc8n65c.pdf pdf_icon

JFPC8N80C

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 8.2. Size:843K  jiaensemi
 jfpc8n60c jffm8n60c.pdf pdf_icon

JFPC8N80C

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

 8.3. Size:740K  jiaensemi
 jfpc8n65d.pdf pdf_icon

JFPC8N80C

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

MOSTRAR MÁS

Otros transistores... JFFM7N60C, JFPC7N65C, JFFC7N65C, JFPC7N90C, JFPC8N60C, JFFM8N60C, JFPC8N65C, JFPC8N65D, AO3400, JFFM8N80C, JFPC9N50C, JFFM9N50C, JFPC9N90C, JFFM9N90C, JFQM3N120E, JFQM3N150C, JFUX5N50D