All MOSFET. JFPC8N80C Datasheet

 

JFPC8N80C MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFPC8N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 167 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 27 nC
   Drain-Source Capacitance (Cd): 120 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
   Package: TO220

 JFPC8N80C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFPC8N80C Datasheet (PDF)

 ..1. Size:547K  jiaensemi
jfpc8n80c jffm8n80c.pdf

JFPC8N80C
JFPC8N80C

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 8.1. Size:1072K  jiaensemi
jfpc8n65c.pdf

JFPC8N80C
JFPC8N80C

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 8.2. Size:843K  jiaensemi
jfpc8n60c jffm8n60c.pdf

JFPC8N80C
JFPC8N80C

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

 8.3. Size:740K  jiaensemi
jfpc8n65d.pdf

JFPC8N80C
JFPC8N80C

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

Datasheet: JFFM7N60C , JFPC7N65C , JFFC7N65C , JFPC7N90C , JFPC8N60C , JFFM8N60C , JFPC8N65C , JFPC8N65D , IRFB4110 , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , JFQM3N120E , JFQM3N150C , JFUX5N50D .

 

 
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