Справочник MOSFET. JFPC8N80C

 

JFPC8N80C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: JFPC8N80C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 167 W

Предельно допустимое напряжение сток-исток |Uds|: 800 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Пороговое напряжение включения |Ugs(th)|: 5 V

Максимально допустимый постоянный ток стока |Id|: 8 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 27 nC

Выходная емкость (Cd): 120 pf

Сопротивление сток-исток открытого транзистора (Rds): 1.9 Ohm

Тип корпуса: TO220

Аналог (замена) для JFPC8N80C

 

 

JFPC8N80C Datasheet (PDF)

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 jfpc8n80c jffm8n80c.pdf

JFPC8N80C JFPC8N80C

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 8.1. Size:740K  jiaensemi
 jfpc8n65d.pdf

JFPC8N80C JFPC8N80C

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 8.2. Size:1072K  jiaensemi
 jfpc8n65c.pdf

JFPC8N80C JFPC8N80C

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 8.3. Size:843K  jiaensemi
 jfpc8n60c jffm8n60c.pdf

JFPC8N80C JFPC8N80C

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRLB4132 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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