JFPC8N80C - описание и поиск аналогов

 

JFPC8N80C. Аналоги и основные параметры

Наименование производителя: JFPC8N80C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 167 W

|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 120 pf

Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm

Тип корпуса: TO220

Аналог (замена) для JFPC8N80C

- подбор ⓘ MOSFET транзистора по параметрам

 

JFPC8N80C даташит

 ..1. Size:547K  jiaensemi
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JFPC8N80C

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 8.1. Size:1072K  jiaensemi
jfpc8n65c.pdfpdf_icon

JFPC8N80C

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 8.2. Size:843K  jiaensemi
jfpc8n60c jffm8n60c.pdfpdf_icon

JFPC8N80C

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

 8.3. Size:740K  jiaensemi
jfpc8n65d.pdfpdf_icon

JFPC8N80C

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

Другие MOSFET... JFFM7N60C , JFPC7N65C , JFFC7N65C , JFPC7N90C , JFPC8N60C , JFFM8N60C , JFPC8N65C , JFPC8N65D , P55NF06 , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , JFQM3N120E , JFQM3N150C , JFUX5N50D .

 

 

 


 
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