JFQM3N150C Todos los transistores

 

JFQM3N150C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JFQM3N150C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 104 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO3PH
 
   - Selección ⓘ de transistores por parámetros

 

JFQM3N150C Datasheet (PDF)

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JFQM3N150C

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

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JFQM3N150C

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Otros transistores... JFPC8N65D , JFPC8N80C , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , JFQM3N120E , IRFP260 , JFUX5N50D , JFDX5N50D , JNFH20N60C , JNFH20N60E , MT06N008A , CS2698ANR , EMB09A3HP , PJF4NA65A .

 

 
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