JFQM3N150C Specs and Replacement
Type Designator: JFQM3N150C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 104 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO3PH
JFQM3N150C substitution
JFQM3N150C Specs
jfqm3n150c.pdf
JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi... See More ⇒
jfqm3n120e.pdf
JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
Detailed specifications: JFPC8N65D , JFPC8N80C , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , JFQM3N120E , 2SK3878 , JFUX5N50D , JFDX5N50D , JNFH20N60C , JNFH20N60E , MT06N008A , CS2698ANR , EMB09A3HP , PJF4NA65A .
Keywords - JFQM3N150C MOSFET specs
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