All MOSFET. JFQM3N150C Datasheet

 

JFQM3N150C MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFQM3N150C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 32 W
   Maximum Drain-Source Voltage |Vds|: 1500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 3 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 37 nC
   Rise Time (tr): 19 nS
   Drain-Source Capacitance (Cd): 104 pF
   Maximum Drain-Source On-State Resistance (Rds): 8 Ohm
   Package: TO3PH

 JFQM3N150C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFQM3N150C Datasheet (PDF)

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jfqm3n150c.pdf

JFQM3N150C JFQM3N150C

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

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jfqm3n120e.pdf

JFQM3N150C JFQM3N150C

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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