JFQM3N150C MOSFET. Datasheet pdf. Equivalent
Type Designator: JFQM3N150C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 104 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO3PH
JFQM3N150C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JFQM3N150C Datasheet (PDF)
jfqm3n150c.pdf
JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi
jfqm3n120e.pdf
JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FCPF20N60
History: FCPF20N60
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