JFQM3N150C Datasheet. Specs and Replacement

Type Designator: JFQM3N150C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO3PH

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JFQM3N150C datasheet

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JFQM3N150C

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi... See More ⇒

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JFQM3N150C

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

Detailed specifications: JFPC8N65D, JFPC8N80C, JFFM8N80C, JFPC9N50C, JFFM9N50C, JFPC9N90C, JFFM9N90C, JFQM3N120E, STP75NF75, JFUX5N50D, JFDX5N50D, JNFH20N60C, JNFH20N60E, MT06N008A, CS2698ANR, EMB09A3HP, PJF4NA65A

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