JNFH20N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JNFH20N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 135 nS
Cossⓘ - Capacitancia de salida: 1150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: TO220F
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JNFH20N60E Datasheet (PDF)
jnfh20n60e.pdf

JNFH20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jnfh20n60c.pdf

JNFH20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
Otros transistores... JFFM9N50C , JFPC9N90C , JFFM9N90C , JFQM3N120E , JFQM3N150C , JFUX5N50D , JFDX5N50D , JNFH20N60C , IRF4905 , MT06N008A , CS2698ANR , EMB09A3HP , PJF4NA65A , QM3090M6 , S80N18R , S80N18S , S80N18RN .
History: IPP111N15N3 | FS3UM-16A | 2N7002DW1T1 | RUH85230S | IXFR32N50Q | IPL60R085P7
History: IPP111N15N3 | FS3UM-16A | 2N7002DW1T1 | RUH85230S | IXFR32N50Q | IPL60R085P7



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