JNFH20N60E Datasheet and Replacement
Type Designator: JNFH20N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 59.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 135 nS
Cossⓘ - Output Capacitance: 1150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220F
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JNFH20N60E Datasheet (PDF)
jnfh20n60e.pdf

JNFH20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jnfh20n60c.pdf

JNFH20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NVMFS5C670NL | SL2343 | IRHLNA77064 | 9926B | SVF6N60F | CS7N80F | IRHLNA797064
Keywords - JNFH20N60E MOSFET datasheet
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History: NVMFS5C670NL | SL2343 | IRHLNA77064 | 9926B | SVF6N60F | CS7N80F | IRHLNA797064



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