FDME1024NZT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDME1024NZT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 3.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 4.2 nC
Resistencia entre drenaje y fuente RDS(on): 0.066 Ohm
Paquete / Cubierta: MICROFET
Búsqueda de reemplazo de MOSFET FDME1024NZT
FDME1024NZT Datasheet (PDF)
fdme1024nzt.pdf
July 2010FDME1024NZTDual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 mFeatures General Description Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 Aultra-portable applications. It features two independe
fdme1023pzt.pdf
July 2010FDME1023PZTDual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 Afor the battery charges switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 Aultra-portable applications. It features two
fdme1023pzt.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdme1034czt.pdf
July 2010FDME1034CZTComplementary PowerTrench MOSFET N-channel: 20 V, 3.8 A, 66 m P-channel: -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Q1: N-Channelfor a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 Aultra-portable applications. It features
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
