FDME1024NZT - описание и поиск аналогов

July 2010 FDME1024NZT Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m Features General Description Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A ultra-portable applications. It features two independe

July 2010 FDME1023PZT Dual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 A for the battery charges switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 A ultra-portable applications. It features two

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

July 2010 FDME1034CZT Complementary PowerTrench MOSFET N-channel 20 V, 3.8 A, 66 m P-channel -20 V, -2.6 A, 142 m Features General Description This device is designed specifically as a single package solution Q1 N-Channel for a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A ultra-portable applications. It features