FDME1024NZT MOSFET. Datasheet pdf. Equivalent
Type Designator: FDME1024NZT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.2 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: MICROFET
FDME1024NZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDME1024NZT Datasheet (PDF)
fdme1024nzt.pdf
July 2010FDME1024NZTDual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 mFeatures General Description Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 Aultra-portable applications. It features two independe
fdme1023pzt.pdf
July 2010FDME1023PZTDual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 Afor the battery charges switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 Aultra-portable applications. It features two
fdme1023pzt.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdme1034czt.pdf
July 2010FDME1034CZTComplementary PowerTrench MOSFET N-channel: 20 V, 3.8 A, 66 m P-channel: -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Q1: N-Channelfor a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 Aultra-portable applications. It features
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFH12N100 | FQA11N90F109
History: IXFH12N100 | FQA11N90F109
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918