SRC65R100BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R100BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28.4 nS
Cossⓘ - Capacitancia de salida: 69.4 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO247 TO220 TO263
Búsqueda de reemplazo de SRC65R100BS MOSFET
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SRC65R100BS datasheet
src65r100bs.pdf
Datasheet 100m , 650V, Super Junction N-Channel Power MOSFET SRC65R100BS General Description Symbol The Sanrise SRC65R100BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r100b.pdf
Datasheet 100m , 650V, Super Junction N-Channel Power MOSFET SRC65R100B General Description Symbol The Sanrise SRC65R100B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
src65r110bs.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110BS General Description Symbol The Sanrise SRC65R110BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r110b.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... SRC65R052FB , SRC65R068BS , SRC65R068BSTL , SRC65R072B , SRC65R082B , SRC65R085B , SRC65R085BS , SRC65R100B , K2611 , SRC65R110B , SRC65R110BS , SRC65R145B , SRC65R170B , SRC65R180 , SRC65R1K3ES , SRC65R220 , SRC65R220BS .
History: BLF888
History: BLF888
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