All MOSFET. SRC65R100BS Datasheet

 

SRC65R100BS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRC65R100BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 69.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO247 TO220 TO263

 SRC65R100BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRC65R100BS Datasheet (PDF)

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