SRC65R100BS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRC65R100BS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 255 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 28.4 ns
Cossⓘ - Выходная емкость: 69.4 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO247 TO220 TO263
- подбор MOSFET транзистора по параметрам
SRC65R100BS Datasheet (PDF)
src65r100bs.pdf

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BSGeneral Description SymbolThe Sanrise SRC65R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r100b.pdf

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BGeneral Description SymbolThe Sanrise SRC65R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src65r110bs.pdf

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r110b.pdf

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NTMFS6B14N | SPN12T20
History: NTMFS6B14N | SPN12T20



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