SRC70R048B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC70R048B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 520.8 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 72 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 182 nC
Tiempo de subida (tr): 6.6 nS
Conductancia de drenaje-sustrato (Cd): 281.4 pF
Resistencia entre drenaje y fuente RDS(on): 0.048 Ohm
Paquete / Cubierta: TO247
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SRC70R048B Datasheet (PDF)
src70r048b.pdf
Datasheet48m, 700V, Super Junction N-Channel Power MOSFET SRC70R048BGeneral Description SymbolThe Sanrise SRC70R048B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an
src70r900.pdf
Datasheet900m, 700V, Super Junction N-Channel Power MOSFET SRC70R900General Description SymbolThe Sanrise SRC70R900 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and
src70r380e.pdf
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Datasheet 230m, 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
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Datasheet 670m, 700V, Super Junction N-Channel Power MOSFET SRC70R670E General Description Symbol The Sanrise SRC70R670E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
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