SRC70R048B MOSFET. Datasheet pdf. Equivalent
Type Designator: SRC70R048B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 520.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 72 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 182 nC
trⓘ - Rise Time: 6.6 nS
Cossⓘ - Output Capacitance: 281.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TO247
SRC70R048B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRC70R048B Datasheet (PDF)
src70r048b.pdf
Datasheet48m, 700V, Super Junction N-Channel Power MOSFET SRC70R048BGeneral Description SymbolThe Sanrise SRC70R048B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an
src70r900.pdf
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src70r380e.pdf
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src70r230.pdf
Datasheet 230m, 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
src70r670e.pdf
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