SRC70R048B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRC70R048B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 520.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 72 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6.6 ns
Cossⓘ - Выходная емкость: 281.4 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
SRC70R048B Datasheet (PDF)
src70r048b.pdf

Datasheet48m, 700V, Super Junction N-Channel Power MOSFET SRC70R048BGeneral Description SymbolThe Sanrise SRC70R048B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an
src70r900.pdf

Datasheet900m, 700V, Super Junction N-Channel Power MOSFET SRC70R900General Description SymbolThe Sanrise SRC70R900 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and
src70r380e.pdf

Datasheet 380m, 700V, Super Junction N-Channel Power MOSFET SRC70R380E General Description Symbol The Sanrise SRC70R380E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src70r230.pdf

Datasheet 230m, 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FQB8N60C | SI2304DDS | NDT6N70 | TPC8123 | 2N6793LCC4 | IPD50R280CE | SML10026DFN
History: FQB8N60C | SI2304DDS | NDT6N70 | TPC8123 | 2N6793LCC4 | IPD50R280CE | SML10026DFN



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