SRH03P098LMTR-G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRH03P098LMTR-G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 12.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 308 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm

Encapsulados: SOP8

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SRH03P098LMTR-G datasheet

 4.1. Size:904K  sanrise-tech
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SRH03P098LMTR-G

Datasheet 9.8m , 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8 enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4 especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V

 8.1. Size:1057K  sanrise-tech
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SRH03P098LMTR-G

Datasheet 14.2m , 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8 The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4 technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3 The SRH03P142L break down vol

Otros transistores... SRC65R800, SRC65R800E, SRC65R800M2, SRC70R048B, SRC70R230, SRC70R380E, SRC70R670E, SRC70R900, IRF640N, SRH03P098LD33TR-G, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, SRH04P500L, SRT03N010LD56, SRT03N010LD56TR-GS