SRH03P098LMTR-G Todos los transistores

 

SRH03P098LMTR-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRH03P098LMTR-G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 308 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: SOP8
 

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SRH03P098LMTR-G Datasheet (PDF)

 4.1. Size:904K  sanrise-tech
 srh03p098l.pdf pdf_icon

SRH03P098LMTR-G

Datasheet 9.8m, 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V

 8.1. Size:1057K  sanrise-tech
 srh03p142l.pdf pdf_icon

SRH03P098LMTR-G

Datasheet 14.2m, 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3The SRH03P142L break down vol

Otros transistores... SRC65R800 , SRC65R800E , SRC65R800M2 , SRC70R048B , SRC70R230 , SRC70R380E , SRC70R670E , SRC70R900 , IRF3710 , SRH03P098LD33TR-G , SRH03P142LMTR-G , SRH03P142LD33TR-G , SRH03P142LDTR-G , SRH04N260L , SRH04P500L , SRT03N010LD56 , SRT03N010LD56TR-GS .

History: IRL3102SPBF | SSP7150N | WMK12N80M3 | PSMN4R5-40BS

 

 
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