SRH03P098LMTR-G MOSFET. Datasheet pdf. Equivalent
Type Designator: SRH03P098LMTR-G
Marking Code: 03P098LMG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 12.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 28 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 308 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0098 Ohm
Package: SOP8
SRH03P098LMTR-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRH03P098LMTR-G Datasheet (PDF)
srh03p098l.pdf
Datasheet 9.8m, 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V
srh03p142l.pdf
Datasheet 14.2m, 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3The SRH03P142L break down vol
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
