SRT045N012HS2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT045N012HS2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 131 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 188 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO263

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SRT045N012HS2 datasheet

 2.1. Size:1675K  sanrise-tech
 srt045n012hs.pdf pdf_icon

SRT045N012HS2

Datasheet 1.2m , 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

 3.1. Size:1222K  sanrise-tech
 srt045n012h.pdf pdf_icon

SRT045N012HS2

Datasheet 1.2m , 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.1. Size:1387K  sanrise-tech
 srt045n025h.pdf pdf_icon

SRT045N012HS2

Datasheet 2.5m , 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.2. Size:1277K  sanrise-tech
 srt045n060h.pdf pdf_icon

SRT045N012HS2

Datasheet 6.0m , 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

MOSTRAR MÁS

Otros transistores... SRT03N010LD56TR-GS, SRT03N011L, SRT03N016L, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, 2N7002, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, SRT04N012L, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS