SRT045N012HS2 Datasheet. Specs and Replacement

Type Designator: SRT045N012HS2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 131 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 188 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO263

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SRT045N012HS2 substitution

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SRT045N012HS2 datasheet

 2.1. Size:1675K  sanrise-tech
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SRT045N012HS2

Datasheet 1.2m , 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super... See More ⇒

 3.1. Size:1222K  sanrise-tech
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SRT045N012HS2

Datasheet 1.2m , 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio... See More ⇒

 6.1. Size:1387K  sanrise-tech
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SRT045N012HS2

Datasheet 2.5m , 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio... See More ⇒

 6.2. Size:1277K  sanrise-tech
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SRT045N012HS2

Datasheet 6.0m , 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio... See More ⇒

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Detailed specifications: SRT03N010LD56TR-GS, SRT03N011L, SRT03N016L, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, IRF9540N, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, SRT04N012L, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS

Keywords - SRT045N012HS2 MOSFET specs

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